Flash Scanning Electron Microscopy

Direct charge measurement in Floating Gate transistors of Flash EEPROM using Scanning Electron Microscopy

We present a characterization methodology for fast direct measurement of the charge accumulated on Floating Gate (FG) transistors of Flash EEPROM cells. Using a Scanning Electron Microscope (SEM) in Passive Voltage Contrast (PVC) mode we were able to distinguish between '0' and '1' bit values stored in each memory cell. Moreover, it was possible to characterize the remaining charge on the FG; t...

of the role of biopolymer clusters in MBR membrane fouling using flash freezing and environmental scanning electron microscopy

Welding of silver nanowire networks via flash white light and UV-C irradiation for highly conductive and reliable transparent electrodes

In this work, silver nanowire inks with hydroxypropyl methylcellulose (HPMC) binders were coated on polyethylene terephthalate (PET) substrates and welded via flash white light and ultraviolet C (UV-C) irradiation to produce highly conductive transparent electrodes. The coated silver nanowire films were firmly welded and embedded into PET substrate successfully at room temperature and under amb...

Investigation of the role of biopolymer clusters in MBR membrane fouling using flash freezing and environmental scanning electron microscopy.

The technique that employs flash freezing and environmental scanning electron microscopy (ESEM) was utilised for detailed investigation of the fouling materials in a membrane bioreactor (MBR). The method involves the flash freezing of a wet sample in liquid nitrogen for 10s to preserve its structure for direct ESEM observation with a high image resolution. ESEM images show that the sludge cake ...

Synthesis of ultrathin semiconducting iron silicide epilayers on Si(1 1 1) by high-temperature flash

In this work ultrathin iron silicide epilayers were obtained by the reaction of iron contaminants with the Si(1 1 1) substrate atoms during high-temperature flash. After repeated flashing at about 1125 C, reflection high-energy electron diffraction indicated silicide formation. Scanning tunneling microscopy revealed highly ordered surface superstructure interrupted, however, by a number of exte...

Ni-Based SAS Process on Source and Drain for High Performance of Polysilicon TFT Low-Voltage Flash Memory Cell

We report the fabrication process, material and electrical characterizations of ultra thin body (UTB) thin film transistors (TFTs) by using nickel (Ni)-based self-aligned silicidation (SAS) process. The resulting polysilicon film, after a chemical mechanical process (CMP), is about 13 nm thick with approximately 1019 cm-3 body doping. Root mean square (RMS) surface roughness below 1 nm is achie...